FDD86250

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FDD86250 datasheet

• Маркировка
  FDD86250
• Производитель
  Fairchild Semiconductor
• Описание
  Fairchild Semiconductor FDD86250 Continuous Drain Current: 50 A Current - Continuous Drain (id) @ 25?° C: 8A Drain To Source Voltage (vdss): 150V Drain-source Breakdown Voltage: 150 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Forward Transconductance Gfs (max / Min): 28 S Gate Charge (qg) @ Vgs: 33nC @ 10V Input Capacitance (ciss) @ Vds: 2110pF @ 75V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Power - Max: 3.1W Power Dissipation: 132 W Rds On (max) @ Id, Vgs: 22 mOhm @ 8A, 10V Resistance Drain-source Rds (on): 31 mOhms Series: - Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4V @ 250?µA RoHS: yes Drain-Source Breakdown Voltage: 150 V Resistance Drain-Source RDS (on): 31 mOhms Forward Transconductance gFS (Max / Min): 28 S Factory Pack Quantity: 2500
• Количество страниц
  6 шт.
• Форматы файла
  HTML, PDF

  (Для просмотра требуется Adobe Acrobat Reader)

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